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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131)

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131)

by Masanori Okuyama (Editor), Masanori Okuyama (Editor), Hiroshi Ishiwara (Editor), Byung-Eun Park (Editor), Shigeki Sakai (Editor), Sung-Min Yoon (Editor)

$148.28

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10 in stock

More Information

Format: Paperback
 Pages: 439
 Edition: 2nd ed. 2020
 Publisher: Springer
Published: 24 Mar 2021
ISBN 10: 9811512140
ISBN 13: 9789811512148