CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (MRS Proceedings)

by Bill Taylor (Editor), Alexander A . Demkov (Editor), H.RustyHarris (Editor), JefferyW.Butterbaugh (Editor), WillyRachmady (Editor)

• New

  Hardcover
  2009

  $118.45

  To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.