by Dominique Schreurs (Editor), WladyslawGrabinski (Editor), Bart Nauwelaers (Editor)
The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
Format: Hardcover
Pages: 306
Publisher: Springer
Published: 22 Mar 2006
ISBN 10: 1402045557
ISBN 13: 9781402045554