Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization: 46 (Semiconductors and Semimetals): Volume 46

by EickeR.Weber (Series Editor), R.K.Willardson (Series Editor), Gerard Ghibaudo (Editor), Constantinos Christofides (Editor)

• New

  Hardcover
  1997

  $284.01

  Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.