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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131) Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131) by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications: 131 (Topics in Applied Physics, 131)

by Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon


ISBN 13: 9789811512148

Format: Paperback (439 pages)
Publisher: Springer
Published: 24 Mar 2021

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